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850nm Laser Diode
50mW 850nm laser diodes
 

 

50mw 850nm Laser Diode

JLD-850-50m-PD

Parameter

Symbol

Value

Unit

Reverse Voltage

Vr

3.5

V

Operating Temperature

Top

-10~+40

°C

Storage Temperature

Tstg

-15 ~ +85

°C

Leadsoldering temperature

Tis

260

°C

Features

Applications

 850nm laser diode

 5mW output power

 With PD

 CW

 TO18 package

 Medical laser treatment

 Laser indicator

 Laser detector

Specifications

 

Min

Type

Max

Center Wavelength@25℃

830nm

845nm

860nm

Spectral Width (FWHM)

2.0nm

Output Power

50mW

Emitter

Single

Beam Divergence (FWHM)

30° x 12°//

Monitor Current

0.5mA

PD Reverse Voltage

30V

PD Forward Current

10mA

Slope Efficiency

0.75mW/mA

Threshold Current (Typ.)

220mA

Operating Current (Typ.)

890mA

Operating Voltage

1.8 V

Package Style

TO18

 
 

100mw 850nm Laser Diode

 

JLD-850-100m-PD

Parameter

Symbol

Value

Unit

Reverse Voltage

Vr

3.5

V

Operating Temperature

Top

-10~+40

°C

Storage Temperature

Tstg

-15 ~ +85

°C

Leadsoldering temperature

Tis

260

°C

Features

Applications

 850nm laser diode

 100mW output power

 With PD

 CW

 TO18 package

 Medical laser treatment

 Laser indicator

 Laser detector

Specifications

 

Min

Type

Max

Center Wavelength@25℃

830nm

845nm

860nm

Spectral Width (FWHM)

2.0nm

Output Power

100mW

Emitter

Single

Beam Divergence (FWHM)

30° x 12°//

Monitor Current

0.5mA

PD Reverse Voltage

30V

PD Forward Current

10mA

Slope Efficiency

0.9mW/mA

Threshold Current (Typ.)

110mA

Operating Current (Typ.)

220mA

Operating Voltage

1.8 V

Package Style

TO18

 
 

300mw 850nm Laser Diode 5.6mm TO 18 Package

JLD-850-300m-PD

Parameter

Symbol

Value

Unit

Reverse Voltage

Vr

3.5

V

Operating Temperature

Top

-10~+40

°C

Storage Temperature

Tstg

-15 ~ +85

°C

Leadsoldering temperature

Tis

260

°C

Features

Applications

 850nm laser diode

 300mW output power

 With PD

 CW

 TO18 package

 Medical laser treatment

 Laser indicator

 Laser detector

Specifications

 

Min

Type

Max

Center Wavelength@25℃

830nm

845nm

860nm

Spectral Width (FWHM)

2.0nm

Output Power

300mW

Emitter

Single

Beam Divergence (FWHM)

30° x 12°//

Monitor Current

----

PD Reverse Voltage

30V

PD Forward Current

10mA

Slope Efficiency

0.8mW/mA

Threshold Current (Typ.)

140mA

Operating Current (Typ.)

520mA

Operating Voltage

1.8 V

Package Style

TO18

 

500mw 850nm Laser Diode TO 5 Package

JLD-850-500m-PD

Parameter

Symbol

Value

Unit

Reverse Voltage

Vr

3.5

V

Operating Temperature

Top

-10~+40

°C

Storage Temperature

Tstg

-15 ~ +85

°C

Leadsoldering temperature

Tis

260

°C

Features

Applications

 850nm laser diode

 500mW output power

 With PD

 CW

 TO5 package

 Medical laser treatment

 Laser indicator

 Laser detector

Specifications

Min

Type

Max

Center Wavelength@25℃

830nm

845nm

860nm

Spectral Width (FWHM)

2.0nm

Output Power

500mW

Emitter

Single

Beam Divergence (FWHM)

30° x 12°//

Monitor Current

----

PD Reverse Voltage

30V

PD Forward Current

10mA

Slope Efficiency

0.75mW/mA

Threshold Current (Typ.)

220mA

Operating Current (Typ.)

890mA

Operating Voltage

1.8 V

Package Style

TO5

 

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